We’re excited to announce that part number SM-A-595820-1 is now available in our ready-to-ship inventory. Part number SM-A-595820-1 is a Semiconductor Devic manufactured by Solid State Devices Inc with FSC 5961 Semiconductor Devices and Associated Hardware. Are you interested in a quick and competitive quote for this part? If so, just fill out the short Request for Quote (RFQ) form below to get started.
As you fill out the RFQ form, make sure that you carefully complete all fields, especially the asterisk-marked (*) fields like Need Parts By and Quantity (ea) for the NSN part SM-A-595820-1. A majority of your quote will be determined by your response to these fields. One of our dedicated sales representatives will get back to you with your quote in 15 minutes or less after receiving your RFQ for SM-A-595820-1.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-526-7975 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 005267975 | 0 | N | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | U | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
FA3413U | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,REPETITIVE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 2ND SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 1ST SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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